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Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors

arXiv · AI, language, vision and robotics · article · Sep 10, 2026 · UTC

Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone cannot uniquely identify the underlying device physics. We present the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom-gate In--W--O (BG-IWO) transistor. Starting from the measured transfer curve and device information, the workf

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