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Designing multiferroic double perovskites Bi2BB'O6 for next-generation MagnetoElectric meMOries

CORDIS · observation · Publication date unknown

ultiferroic double perovskites Bi2BB'O6 for next-generation MagnetoElectric meMOries Computers and electronic devices are essential, but the emerging concepts such as the Internet of Things (IoT) and artificial intelligence (AI), demand substantial power. Thus, a significant shift in computer hardware is necessary. However, Moore's law, which has driven microelectronics by scaling complementary metal-oxide-semiconductor (CMOS-) transistors, is reaching its limit. Therefore, encoding information in collective order parameters using innovative materials and architectures becomes crucial for future advancements. Among the proposed approaches, electric-field control of magnetism through multiferroics stands out as the most promising pathway. In 2019, Intel proposed magnetoelectric spin-orbit (MESO) devices aiming to create low-power and dimensionally-scalable transistors that address the limitations of CMOS-based technology. Limited by the rarity of room-temperature multiferroics, this architecture primarily relies on the ferroelectric/antiferromagnetic compound BiFeO3. However, when I

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SIGNED

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EU

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272799.92

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