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Metal-ion-based fabrication solutions for green AI hardware, addressing one of the today’s urgent needs

CORDIS · observation · Publication date unknown

Metal-ion-based fabrication solutions for green AI hardware, addressing one of the today’s urgent needs Data centres running artificial intelligence AI and machine-learning workloads significantly impact climate change due to their massive electricity consumption. The urgent need for sustainable solutions has highlighted the potential of emerging ferroelectric random-access memories (FRAMs), particularly HfO2-based FRAMs. These devices offer low power consumption and fast switching speeds, making them ideal for energy-efficient data storage technologies. However, achieving stable and uniform ferroelectric properties in HfO2-based thin films requires the precise engineering of strain and defects under specific conditions. Overcoming these technical challenges is crucial for the widespread adoption of the FRAM technology to help mitigating the environmental impacts of data centres. I aim to tackle these challenges by proposing metal-ion-based magnetron sputtering strategies. HiPIMS-Fmemories will enable the grow

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award

status

SIGNED

region

EU

value

263393.28

unit

EUR