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Extreme Ultraviolet Scatterometry for Semiconductor Inspection and Nanoscale Metrology (EUVISION)

CORDIS · observation · Publication date unknown

oded information and enable true 3D profile reconstruction; (2) build and validate an inversion framework that combines rigorous electromagnetic modeling (RCWA) with optimization and physics-informed machine learning for robust parameter retrieval; (3) demonstrate process-compatible, at-resolution metrology on industry-relevant resist structures produced under controlled EUV exposure conditions; and (4) extend the method to atomically thin materials (graphene and transition-metal dichalcogenides), where single-defect perturbations can strongly degrade device performance, requiring metrology on few- to monolayer systems. The approach integrates broadband HHG illumination, collection of multiple diffraction orders, and quantitative inversion against reference data (CD-SEM, AFM, TEM) to establish accuracy and repeatability. Sample integrity and practical tool integration are assessed throughout to ensure relevance for semiconductor manufacturing. EUVISION will deliver a validated route to fast, non-invasive, 3D wafer metrology at the device scale today, and a platform ready for future

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recordType

award

status

SIGNED

region

EU

value

150000

unit

EUR